STL57N65M5 Datasheet. Specs and Replacement

Type Designator: STL57N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: POWERFLAT8X8

STL57N65M5 substitution

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STL57N65M5 datasheet

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STL57N65M5

STL57N65M5 N-channel 650 V, 0.061 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL57N65M5 710 V 0.069 22.5 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package 100% avalanche tested PowerFLAT 8x8 HV ... See More ⇒

Detailed specifications: STL45N65M5, STL4N10F7, STL4N80K5, STL4P2UH7, STL4P3LLH6, STL50NH3LL, STL51N3LLH5, STL55NH3LL, 50N06, STL58N3LLH5, STL60N10F7, STL60NH3LL, STL60P4LLF6, STL62P3LLH6, STL66DN3LLH5, STL66N3LLH5, STL6N2VH5

Keywords - STL57N65M5 MOSFET specs

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