All MOSFET. STL57N65M5 Datasheet

 

STL57N65M5 Datasheet and Replacement


   Type Designator: STL57N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: POWERFLAT8X8
 

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STL57N65M5 Datasheet (PDF)

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STL57N65M5

STL57N65M5N-channel 650 V, 0.061 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL57N65M5 710 V 0.069 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package 100% avalanche testedPowerFLAT 8x8 HV

Datasheet: STL45N65M5 , STL4N10F7 , STL4N80K5 , STL4P2UH7 , STL4P3LLH6 , STL50NH3LL , STL51N3LLH5 , STL55NH3LL , 50N06 , STL58N3LLH5 , STL60N10F7 , STL60NH3LL , STL60P4LLF6 , STL62P3LLH6 , STL66DN3LLH5 , STL66N3LLH5 , STL6N2VH5 .

History: NCEP50P80A | SIHFBC30A | P1703BDG | FQP1P50 | RQ5E035AT | SM6107PSU | TSM3548DCX6

Keywords - STL57N65M5 MOSFET datasheet

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