STL57N65M5 Datasheet and Replacement
Type Designator: STL57N65M5
Marking Code: 57N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 96 nC
trⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: POWERFLAT8X8
STL57N65M5 Datasheet (PDF)
stl57n65m5.pdf

STL57N65M5N-channel 650 V, 0.061 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL57N65M5 710 V 0.069 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package 100% avalanche testedPowerFLAT 8x8 HV
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: SWN2N65K | IXFP4N100QM | APT4016SVFRG | ZXMC3A18DN8 | AP50T10GJ-HF
Keywords - STL57N65M5 MOSFET datasheet
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History: SWN2N65K | IXFP4N100QM | APT4016SVFRG | ZXMC3A18DN8 | AP50T10GJ-HF



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