STL58N3LLH5 Datasheet and Replacement
Type Designator: STL58N3LLH5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 193 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: POWERFLAT5X6
STL58N3LLH5 substitution
STL58N3LLH5 Datasheet (PDF)
stl58n3llh5.pdf

STL58N3LLH5Automotive-grade N-channel 30 V, 0.0076 typ., 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL58N3LLH5 30 V 0.009 56 A Designed for automotive applications and1AEC-Q101 qualified234 Low on-resistance High avalanche ruggednessPowerFLAT 5x6 Low gate
Datasheet: STL4N10F7 , STL4N80K5 , STL4P2UH7 , STL4P3LLH6 , STL50NH3LL , STL51N3LLH5 , STL55NH3LL , STL57N65M5 , IRF640 , STL60N10F7 , STL60NH3LL , STL60P4LLF6 , STL62P3LLH6 , STL66DN3LLH5 , STL66N3LLH5 , STL6N2VH5 , STL6N3LLH6 .
History: CEB6086 | AP60WN2K3H | CSD25302Q2
Keywords - STL58N3LLH5 MOSFET datasheet
STL58N3LLH5 cross reference
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History: CEB6086 | AP60WN2K3H | CSD25302Q2



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