STL60N10F7 Datasheet. Specs and Replacement

Type Designator: STL60N10F7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: POWERFLAT5X6

STL60N10F7 substitution

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STL60N10F7 datasheet

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STL60N10F7

STL60N10F7 N-channel 100 V, 0.0145 typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features RDS(on) Order code VDS max ID PTOT STL60N10F7 100 V 0.018 12 A 5 W 1 2 3 4 Ultra low on-resistance 100% avalanche tested PowerFLAT 5x6 Applications Switching applications Description Figure 1. Intern... See More ⇒

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STL60N10F7

STL60NH3LL N-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID (max) STL60NH3LL 30V ... See More ⇒

 8.2. Size:583K  st
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STL60N10F7

STL60N3LLH5 N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL60N3LLH5 30 V ... See More ⇒

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STL60N10F7

STL60N32N3LL Dual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6 asymmetrical double island, STripFET Power MOSFET Features Order code VDSS RDS(on) ID 4 Q1 30 V ... See More ⇒

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Detailed specifications: STL4N80K5, STL4P2UH7, STL4P3LLH6, STL50NH3LL, STL51N3LLH5, STL55NH3LL, STL57N65M5, STL58N3LLH5, IRFZ44, STL60NH3LL, STL60P4LLF6, STL62P3LLH6, STL66DN3LLH5, STL66N3LLH5, STL6N2VH5, STL6N3LLH6, STL6NM60N

Keywords - STL60N10F7 MOSFET specs

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