STL60P4LLF6 Datasheet. Specs and Replacement

Type Designator: STL60P4LLF6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.6 nS

Cossⓘ - Output Capacitance: 344 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: POWERFLAT5X6

STL60P4LLF6 substitution

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STL60P4LLF6 datasheet

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 stl60p4llf6.pdf pdf_icon

STL60P4LLF6

STL60P4LLF6 P-channel 40 V, 0.0115 typ.,60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1 Internal schematic diagram This device is a P-channel Power MOSFET d... See More ⇒

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 stl60nh3ll.pdf pdf_icon

STL60P4LLF6

STL60NH3LL N-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID (max) STL60NH3LL 30V ... See More ⇒

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 stl60n3llh5.pdf pdf_icon

STL60P4LLF6

STL60N3LLH5 N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL60N3LLH5 30 V ... See More ⇒

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 stl60n32n3ll.pdf pdf_icon

STL60P4LLF6

STL60N32N3LL Dual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6 asymmetrical double island, STripFET Power MOSFET Features Order code VDSS RDS(on) ID 4 Q1 30 V ... See More ⇒

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Detailed specifications: STL4P3LLH6, STL50NH3LL, STL51N3LLH5, STL55NH3LL, STL57N65M5, STL58N3LLH5, STL60N10F7, STL60NH3LL, IRF1404, STL62P3LLH6, STL66DN3LLH5, STL66N3LLH5, STL6N2VH5, STL6N3LLH6, STL6NM60N, STL6P3LLH6, STL70N10F3

Keywords - STL60P4LLF6 MOSFET specs

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