STL60P4LLF6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL60P4LLF6
Marking Code: 60P4LLF6
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 4.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 60.6
nS
Cossⓘ -
Output Capacitance: 344
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package: POWERFLAT5X6
STL60P4LLF6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL60P4LLF6
Datasheet (PDF)
..1. Size:881K st
stl60p4llf6.pdf
STL60P4LLF6 P-channel 40 V, 0.0115 typ.,60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is a P-channel Power MOSFET d
9.1. Size:384K st
stl60nh3ll.pdf
STL60NH3LLN-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5)ultra low gate charge STripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STL60NH3LL 30V
9.2. Size:583K st
stl60n3llh5.pdf
STL60N3LLH5N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL60N3LLH5 30 V
9.3. Size:1420K st
stl60n32n3ll.pdf
STL60N32N3LLDual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6asymmetrical double island, STripFET Power MOSFETFeaturesOrder code VDSS RDS(on) ID4Q1 30 V
9.4. Size:1280K st
stl60n10f7.pdf
STL60N10F7N-channel 100 V, 0.0145 typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTL60N10F7 100 V 0.018 12 A 5 W1234 Ultra low on-resistance 100% avalanche testedPowerFLAT 5x6 Applications Switching applicationsDescriptionFigure 1. Intern
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