STL6P3LLH6 Datasheet and Replacement
Type Designator: STL6P3LLH6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 178 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: POWERFLAT3.3X3.3
STL6P3LLH6 substitution
STL6P3LLH6 Datasheet (PDF)
stl6p3llh6.pdf

STL6P3LLH6 P-channel 30 V, 0.024 typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications 1 Switching applications 234Description PowerFL AT 3.3 x 3.3This device is a P-channel Power MO
Datasheet: STL60NH3LL , STL60P4LLF6 , STL62P3LLH6 , STL66DN3LLH5 , STL66N3LLH5 , STL6N2VH5 , STL6N3LLH6 , STL6NM60N , P55NF06 , STL70N10F3 , STL75NH3LL , STL7DN6LF3 , STL7N10F7 , STL7N6LF3 , STL7N80K5 , STL86N3LLH6AG , STL8DN10LF3 .
History: DMP6110SVT | VBZE30N06 | FDM21-05QC | IRF1405ZPBF | FQT3P20TF
Keywords - STL6P3LLH6 MOSFET datasheet
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History: DMP6110SVT | VBZE30N06 | FDM21-05QC | IRF1405ZPBF | FQT3P20TF



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