STL70N10F3
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL70N10F3
Marking Code: 70N10F3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 56
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package: POWERFLAT5X6
STL70N10F3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL70N10F3
Datasheet (PDF)
..1. Size:906K st
stl70n10f3.pdf 
STL70N10F3N-channel 100 V, 0.0078 , 16 A STripFET III Power MOSFET in PowerFLAT 5x6 packageDatasheet production dataFeaturesRDS(on) max Order code VDSS @VGS=10V ID PTOTSTL70N10F3 100 V 0.0084 16 A 136 W1 Improved die-to-footprint ratio234 Very low thermal resistancePowerFLAT 5x6 Low on-resistanceApplications Switching applications
8.1. Size:264K st
stl70n4llf5.pdf
STL70N4LLF5N-channel 40 V, 0.0055 , 18 A, PowerFLAT (6x5)STripFET V Power MOSFETPreliminary DataFeaturesRDS(on) Type VDSS IDmaxSTL70N4LLF5 40 V 0.0065 18 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)PowerFLAT ( 6x5 ) High avalanche ruggedness Low gate drive power lossesA
8.2. Size:544K st
stl70n2llh5.pdf
STL70N2LLH5N-channel 30 V, 0.0059 , 18 A PowerFLAT (5x6)STripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS ID8max5STL70N2LLH5 30 V
Datasheet: IRFP360LC
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