STL70N10F3 Datasheet and Replacement
Type Designator: STL70N10F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: POWERFLAT5X6
STL70N10F3 substitution
STL70N10F3 Datasheet (PDF)
stl70n10f3.pdf
STL70N10F3N-channel 100 V, 0.0078 , 16 A STripFET III Power MOSFET in PowerFLAT 5x6 packageDatasheet production dataFeaturesRDS(on) max Order code VDSS @VGS=10V ID PTOTSTL70N10F3 100 V 0.0084 16 A 136 W1 Improved die-to-footprint ratio234 Very low thermal resistancePowerFLAT 5x6 Low on-resistanceApplications Switching applications
stl70n4llf5.pdf
STL70N4LLF5N-channel 40 V, 0.0055 , 18 A, PowerFLAT (6x5)STripFET V Power MOSFETPreliminary DataFeaturesRDS(on) Type VDSS IDmaxSTL70N4LLF5 40 V 0.0065 18 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)PowerFLAT ( 6x5 ) High avalanche ruggedness Low gate drive power lossesA
stl70n2llh5.pdf
STL70N2LLH5N-channel 30 V, 0.0059 , 18 A PowerFLAT (5x6)STripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS ID8max5STL70N2LLH5 30 V
Datasheet: STL60P4LLF6 , STL62P3LLH6 , STL66DN3LLH5 , STL66N3LLH5 , STL6N2VH5 , STL6N3LLH6 , STL6NM60N , STL6P3LLH6 , IRFB4227 , STL75NH3LL , STL7DN6LF3 , STL7N10F7 , STL7N6LF3 , STL7N80K5 , STL86N3LLH6AG , STL8DN10LF3 , STL8DN4LLF6 .
History: FDP24AN06LA0 | APT20M20LFLLG | RSM002P03T2L | QM4014D | IRFP9140PBF | AM4431P | CPH3360
Keywords - STL70N10F3 MOSFET datasheet
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History: FDP24AN06LA0 | APT20M20LFLLG | RSM002P03T2L | QM4014D | IRFP9140PBF | AM4431P | CPH3360
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