IXFT30N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT30N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 227 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 750(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO268
IXFT30N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT30N50 Datasheet (PDF)
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC
ixfh30n50p ixft30n50p ixfv30n50p.pdf
VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to
ixft30n50q.pdf
VDSS ID25 RDS(on)HiPerFETTMPower MOSFETsIXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS =
ixfh30n60x ixfq30n60x ixft30n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150
ixft30n60q.pdf
IXFH 30N60Q VDSS = 600 VHiPerFETTMIXFT 30N60Q ID25 = 30 APower MOSFETsRDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB
ixfh30n60p ixfv30n60p ixft30n60p.pdf
IXFH 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFT 30N60P ID25 = 30 APower MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXFV 30N60PS trr 200 nsFast Recovery DiodeAvalanche RatedPLUS220 (IXFV)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS
Datasheet: IXFT14N100 , IXFT15N100 , IXFT15N80Q , IXFT20N60Q , IXFT20N80Q , IXFT24N100 , IXFT26N50Q , IXFT26N60Q , IRF4905 , IXFT32N50 , IXFT32N50Q , IXFT40N30Q , IXFT4N100Q , IXFT52N30Q , IXFT58N20Q , IXFT60N25Q , IXFT6N100Q .
