STL7N10F7 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL7N10F7
Marking Code: 7N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 215 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: POWERFLAT3.3X3.3
STL7N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL7N10F7 Datasheet (PDF)
stl7n10f7.pdf
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stl7nm60n.pdf
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