STL86N3LLH6AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STL86N3LLH6AG
Marking Code: 86N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: POWERFLAT5X6
STL86N3LLH6AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL86N3LLH6AG Datasheet (PDF)
stl86n3llh6ag.pdf
STL86N3LLH6AGAutomotive-grade N-channel 30 V, 0.004 typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTL86N3LLH6AG 30 V 0.0052 80 A Designed for automotive application and 12AEC-Q101 qualified34 Very low on-resistancePowerFLAT 5x6 Very low gate charge High
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918