STL86N3LLH6AG Datasheet and Replacement
Type Designator: STL86N3LLH6AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: POWERFLAT5X6
STL86N3LLH6AG substitution
STL86N3LLH6AG Datasheet (PDF)
stl86n3llh6ag.pdf
STL86N3LLH6AGAutomotive-grade N-channel 30 V, 0.004 typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTL86N3LLH6AG 30 V 0.0052 80 A Designed for automotive application and 12AEC-Q101 qualified34 Very low on-resistancePowerFLAT 5x6 Very low gate charge High
Datasheet: STL6NM60N , STL6P3LLH6 , STL70N10F3 , STL75NH3LL , STL7DN6LF3 , STL7N10F7 , STL7N6LF3 , STL7N80K5 , 7N65 , STL8DN10LF3 , STL8DN4LLF6 , STL8DN6LF3 , STL8N10F7 , STL8N10LF3 , STL8N80K5 , STL8NH3LL , STL8P2UH7 .
Keywords - STL86N3LLH6AG MOSFET datasheet
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