STL8DN10LF3 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL8DN10LF3
Marking Code: 8DN10LF3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20.5 nC
trⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: POWERFLAT5X6
STL8DN10LF3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL8DN10LF3 Datasheet (PDF)
stl8dn10lf3.pdf
STL8DN10LF3Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and 12AEC-Q101 qualified34 Logic level VGS(th)PowerFLAT 5x6 175 C junction
stl8dn6lf3.pdf
STL8DN6LF3Dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in PowerFLAT 5x6 double island packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmaxSTL8DN6LF3 60 V
stl8dn4llf6.pdf
STL8DN4LLF6Dual N-channel 40 V, 0.025 typ., 8 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet - target specificationFeaturesOrder code VDS RDS(on)max ID0.03 (VGS=10 V)STL8DN4LLF6 40 V 8 A0.05 (VGS=4.5 V) Very low on-resistance High avalanche ruggednessPowerFLAT 5x6double islandApplications Switching
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100