All MOSFET. STL8P2UH7 Datasheet

 

STL8P2UH7 Datasheet and Replacement


   Type Designator: STL8P2UH7
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.5 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: POWERFLAT2X2
 

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STL8P2UH7 Datasheet (PDF)

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STL8P2UH7

STL8P2UH7 P-channel 20 V, 0.0195 typ., 8 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features 123 Order code V R max I 6 DS DS(on) D15243 STL8P2UH7 20 V 0.0225 @ 4.5 V 8 A PowerFLAT 2x2 Extremely low on-resistance R DS(on) Ultra logic level Figure 1: Internal schematic diagram Applic

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STL8P2UH7

STL8P4LLF6 P-channel 40 V, 0.0175 typ.,8 A, STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL8P4LLF6 40 V 0.0205 8 A 2.9 W 12 Very low on-resistance 34 Very low gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT 3.3x3.3Appl

Datasheet: STL86N3LLH6AG , STL8DN10LF3 , STL8DN4LLF6 , STL8DN6LF3 , STL8N10F7 , STL8N10LF3 , STL8N80K5 , STL8NH3LL , IRF1010E , STL8P4LLF6 , STL90N10F7 , STL9N60M2 , STL9P2UH7 , STV160NF02LAT4 , STV160NF02LT4 , STV160NF03LAT4 , STV160NF03LT4 .

History: FDU2572 | PD6D2BA | KUK128-50DL | SED8830 | MTN2N60FP | PK6A6BA | CJS2013

Keywords - STL8P2UH7 MOSFET datasheet

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