STL8P2UH7 Datasheet and Replacement
Type Designator: STL8P2UH7
Marking Code: 8L2U
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 30.5 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
Package: POWERFLAT2X2
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STL8P2UH7 Datasheet (PDF)
stl8p2uh7.pdf

STL8P2UH7 P-channel 20 V, 0.0195 typ., 8 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features 123 Order code V R max I 6 DS DS(on) D15243 STL8P2UH7 20 V 0.0225 @ 4.5 V 8 A PowerFLAT 2x2 Extremely low on-resistance R DS(on) Ultra logic level Figure 1: Internal schematic diagram Applic
stl8p4llf6.pdf

STL8P4LLF6 P-channel 40 V, 0.0175 typ.,8 A, STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL8P4LLF6 40 V 0.0205 8 A 2.9 W 12 Very low on-resistance 34 Very low gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT 3.3x3.3Appl
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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