STL8P2UH7 Datasheet. Specs and Replacement

Type Designator: STL8P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: POWERFLAT2X2

STL8P2UH7 substitution

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STL8P2UH7 datasheet

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 stl8p2uh7.pdf pdf_icon

STL8P2UH7

STL8P2UH7 P-channel 20 V, 0.0195 typ., 8 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features 1 2 3 Order code V R max I 6 DS DS(on) D 1 5 2 4 3 STL8P2UH7 20 V 0.0225 @ 4.5 V 8 A PowerFLAT 2x2 Extremely low on-resistance R DS(on) Ultra logic level Figure 1 Internal schematic diagram Applic... See More ⇒

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 stl8p4llf6.pdf pdf_icon

STL8P2UH7

STL8P4LLF6 P-channel 40 V, 0.0175 typ.,8 A, STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8P4LLF6 40 V 0.0205 8 A 2.9 W 1 2 Very low on-resistance 3 4 Very low gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT 3.3x3.3 Appl... See More ⇒

Detailed specifications: STL86N3LLH6AG, STL8DN10LF3, STL8DN4LLF6, STL8DN6LF3, STL8N10F7, STL8N10LF3, STL8N80K5, STL8NH3LL, IRF9540N, STL8P4LLF6, STL90N10F7, STL9N60M2, STL9P2UH7, STV160NF02LAT4, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs