All MOSFET. STL9P2UH7 Datasheet

 

STL9P2UH7 Datasheet and Replacement


   Type Designator: STL9P2UH7
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.5 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: POWERFLAT3.3X3.3
 

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STL9P2UH7 Datasheet (PDF)

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STL9P2UH7

STL9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description 12This P-channel Power MOSFET utilizes the 3STripFET H7 technology with a trench g

Datasheet: STL8N10F7 , STL8N10LF3 , STL8N80K5 , STL8NH3LL , STL8P2UH7 , STL8P4LLF6 , STL90N10F7 , STL9N60M2 , SPP20N60C3 , STV160NF02LAT4 , STV160NF02LT4 , STV160NF03LAT4 , STV160NF03LT4 , STV200N55F3 , STV60NE06-16 , STW10N105K5 , STW10N95K5 .

History: 2SJ669 | AOLF66610 | TPCS8303 | AUIRFB3306 | NVS4409N | AP60WN1K2H | TPC65R600C

Keywords - STL9P2UH7 MOSFET datasheet

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