STL9P2UH7 Datasheet. Specs and Replacement

Type Designator: STL9P2UH7

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: POWERFLAT3.3X3.3

STL9P2UH7 substitution

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STL9P2UH7 datasheet

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STL9P2UH7

STL9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description 1 2 This P-channel Power MOSFET utilizes the 3 STripFET H7 technology with a trench g... See More ⇒

Detailed specifications: STL8N10F7, STL8N10LF3, STL8N80K5, STL8NH3LL, STL8P2UH7, STL8P4LLF6, STL90N10F7, STL9N60M2, K3569, STV160NF02LAT4, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4, STV200N55F3, STV60NE06-16, STW10N105K5, STW10N95K5

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