All MOSFET. STL9P2UH7 Datasheet

 

STL9P2UH7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL9P2UH7
   Marking Code: 9P2H7
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 30.5 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: POWERFLAT3.3X3.3

 STL9P2UH7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL9P2UH7 Datasheet (PDF)

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 stl9p2uh7.pdf

STL9P2UH7 STL9P2UH7

STL9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description 12This P-channel Power MOSFET utilizes the 3STripFET H7 technology with a trench g

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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