All MOSFET. STL9P2UH7 Datasheet

 

STL9P2UH7 Datasheet and Replacement


   Type Designator: STL9P2UH7
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30.5 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: POWERFLAT3.3X3.3
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STL9P2UH7 Datasheet (PDF)

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STL9P2UH7

STL9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description 12This P-channel Power MOSFET utilizes the 3STripFET H7 technology with a trench g

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AONR21305C | 12N70L-TA3-T | IRFR2905Z | AFN6820 | TSM9435CS | AP9962AGP-HF | PHP45NQ11T

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