STV160NF02LAT4 Datasheet. Specs and Replacement

Type Designator: STV160NF02LAT4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 650 nS

Cossⓘ - Output Capacitance: 3210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: POWERSO-10

STV160NF02LAT4 substitution

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STV160NF02LAT4 datasheet

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STV160NF02LAT4

STV160NF02LA N-CHANNEL 20V - 0.0018 - 160A PowerSO-10 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STV160NF02LA 20 V ... See More ⇒

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STV160NF02LAT4

STV160NF02LA N-CHANNEL 20V - 0.0018 - 160A PowerSO-10 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STV160NF02LA 20 V ... See More ⇒

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STV160NF02LAT4

STV160NF02L N-CHANNEL 20V - 0.0016 - 160A PowerSO-10 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STV160NF02L 20 V ... See More ⇒

 3.2. Size:537K  st
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STV160NF02LAT4

STV160NF02L N-CHANNEL 20V - 0.0016 - 160A PowerSO-10 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STV160NF02L 20 V ... See More ⇒

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Detailed specifications: STL8N10LF3, STL8N80K5, STL8NH3LL, STL8P2UH7, STL8P4LLF6, STL90N10F7, STL9N60M2, STL9P2UH7, IRFP260, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4, STV200N55F3, STV60NE06-16, STW10N105K5, STW10N95K5, STW10NA50

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