STV200N55F3 Datasheet and Replacement
Type Designator: STV200N55F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: POWERSO-10
STV200N55F3 substitution
STV200N55F3 Datasheet (PDF)
stv200n55f3.pdf
STV200N55F3N-channel 55 V, 1.8 m, 200 A, PowerSO-10STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID (1)max10STV200N55F3 55 V
Datasheet: STL8P4LLF6 , STL90N10F7 , STL9N60M2 , STL9P2UH7 , STV160NF02LAT4 , STV160NF02LT4 , STV160NF03LAT4 , STV160NF03LT4 , IRFB3607 , STV60NE06-16 , STW10N105K5 , STW10N95K5 , STW10NA50 , STW11NB80 , STW12NA60 , STW12NM60N , STW13N60M2 .
History: 2SK30ATM | JBE102G | AOI296A
Keywords - STV200N55F3 MOSFET datasheet
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History: 2SK30ATM | JBE102G | AOI296A
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