STV200N55F3 Datasheet. Specs and Replacement

Type Designator: STV200N55F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: POWERSO-10

STV200N55F3 substitution

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STV200N55F3 datasheet

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STV200N55F3

STV200N55F3 N-channel 55 V, 1.8 m , 200 A, PowerSO-10 STripFET Power MOSFET Features RDS(on) Type VDSS ID (1) max 10 STV200N55F3 55 V ... See More ⇒

Detailed specifications: STL8P4LLF6, STL90N10F7, STL9N60M2, STL9P2UH7, STV160NF02LAT4, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4, K4145, STV60NE06-16, STW10N105K5, STW10N95K5, STW10NA50, STW11NB80, STW12NA60, STW12NM60N, STW13N60M2

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