All MOSFET. STW11NB80 Datasheet

 

STW11NB80 Datasheet and Replacement


   Type Designator: STW11NB80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-247
 

 STW11NB80 substitution

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STW11NB80 Datasheet (PDF)

 ..1. Size:191K  st
 stw11nb80.pdf pdf_icon

STW11NB80

STW11NB80N-CHANNEL 800V - 0.65 - 11A - T0-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW11NB80 800 V

 8.1. Size:943K  st
 stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf pdf_icon

STW11NB80

STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V

 8.2. Size:241K  st
 stw11nk90z.pdf pdf_icon

STW11NB80

STW11NK90ZN-channel 900V - 0.82 - 9.2A - TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTW11NK90Z 900V

 8.3. Size:904K  st
 stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf pdf_icon

STW11NB80

STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V

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Datasheet: STV160NF02LT4 , STV160NF03LAT4 , STV160NF03LT4 , STV200N55F3 , STV60NE06-16 , STW10N105K5 , STW10N95K5 , STW10NA50 , IRF530 , STW12NA60 , STW12NM60N , STW13N60M2 , STW13N80K5 , STW13NB60 , STW13NK80Z , STW13NM50N , STW14NK60Z .

Keywords - STW11NB80 MOSFET datasheet

 STW11NB80 cross reference
 STW11NB80 equivalent finder
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