STW11NB80 Datasheet: MOSFET, N-Ch, 800V, 11A. Full specification with pinout and replacement list

STW11NB80 Datasheet. Specs and Replacement

Type Designator: STW11NB80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-247

STW11NB80 substitution

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STW11NB80 datasheet

..1. Size:191K st
stw11nb80.pdf pdf_icon

STW11NB80 N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW11NB80 800 V ... See More ⇒

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STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STW11NK90Z 900V ... See More ⇒

8.3. Size:904K st
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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET in D PAK, TO-220FP, I PAK, TO-220, TO-247 Features RDS(on) Order codes VDSS RDS(on)*Qg ID max 3 3 1 2 STB11NM80 1 D PAK TO-220FP STF11NM80 STI11NM80 800 V ... See More ⇒