STW12NA60 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW12NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-247
STW12NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW12NA60 Datasheet (PDF)
stw12na60.pdf
DataSheet4U.com DataSheet4U.comDataSheeDataSheet4U.com DataSheet4U.com
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