STW12NA60 Datasheet. Specs and Replacement

Type Designator: STW12NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-247

STW12NA60 substitution

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STW12NA60 datasheet

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STW12NA60

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STW12NA60

STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW12NA50 500 V ... See More ⇒

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STW12NA60

STW12NK90Z N-channel 900V - 0.72 - 11A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID pW STW12NK90Z 900V ... See More ⇒

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Detailed specifications: STV160NF03LAT4, STV160NF03LT4, STV200N55F3, STV60NE06-16, STW10N105K5, STW10N95K5, STW10NA50, STW11NB80, IRFB3607, STW12NM60N, STW13N60M2, STW13N80K5, STW13NB60, STW13NK80Z, STW13NM50N, STW14NK60Z, STW14NM50

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.