STW12NM60N Datasheet and Replacement
Type Designator: STW12NM60N
Marking Code: W12NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30.5 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
Package: TO-247
- MOSFET Cross-Reference Search
STW12NM60N Datasheet (PDF)
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
stw12nk90z.pdf

STW12NK90ZN-channel 900V - 0.72 - 11A - TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID pWSTW12NK90Z 900V
stw12na50.pdf

STW12NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW12NA50 500 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 5N65KG-TND-R
Keywords - STW12NM60N MOSFET datasheet
STW12NM60N cross reference
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History: 5N65KG-TND-R



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