STW19NM60N Specs and Replacement

Type Designator: STW19NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm

Package: TO-247

STW19NM60N substitution

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STW19NM60N datasheet

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STW19NM60N

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 stb19nm65n sti19nm65n stf19nm65n stp19nm65n stw19nm65n.pdf pdf_icon

STW19NM60N

STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET Features VDSS Type RDS(on) max ID (@Tjmax) 3 2 3 1 2 1 STB19NM65N 710 V ... See More ⇒

 6.2. Size:538K  st
 stb19nm65n stf19nm65n sti19nm65n stp19nm65n stw19nm65n.pdf pdf_icon

STW19NM60N

STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET Features VDSS Type RDS(on) max ID (@Tjmax) 3 2 3 1 2 1 STB19NM65N 710 V ... See More ⇒

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 stf19nm50n stp19nm50n stw19nm50n.pdf pdf_icon

STW19NM60N

STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 , 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 STF19NM50N 2 2 1 1 STP19NM50N 550 V ... See More ⇒

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Detailed specifications: STW15NB50, STW15NM60N, STW16NM50N, STW18N60M2, STW18N65M5, STW18NK60Z, STW18NK80Z, STW18NM60ND, IRF520, STW19NM65N, STW200NF03, STW20N65M5, STW20NB50, STW20NK70Z, STW20NM65N, STW21NM50N, STW21NM60N

Keywords - STW19NM60N MOSFET specs

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