STW32NM50N Specs and Replacement

Type Designator: STW32NM50N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 179 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-247

STW32NM50N substitution

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STW32NM50N datasheet

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stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf pdf_icon

STW32NM50N

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in D PAK, TO-220FP, TO-220, TO-247 packages Datasheet production data Features TAB RDS(on) Order codes VDS ID PTOT 2 max. 3 1 3 2 STB32NM50N 190 W 1 D PAK TO-220FP STF32NM50N 35 W 500 V 0.13 22 A STP32NM50N 190 W TAB STW32NM50N 190 W 100% avalanche t... See More ⇒

 8.1. Size:1086K  st
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf pdf_icon

STW32NM50N

STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V ... See More ⇒

 8.2. Size:277K  st
stp32n55m5 stw32n55m5.pdf pdf_icon

STW32NM50N

STP32N55M5, STW32N55M5 N-channel 550 V, 0.074 , 29 A, MDmesh V Power MOSFET in TO-220 and TO-247 Preliminary data Features VDSS RDS(on) Order codes ID @TJmax max STP32N55M5 550 V ... See More ⇒

Detailed specifications: STW28NM60ND, STW29NK50Z, STW29NK50ZD, STW30N20, STW30NM60D, STW30NM60N, STW30NM60ND, STW31N65M5, IRF740, STW33N20, STW33N60M2, STW34N65M5, STW36N55M5, STW36NM60ND, STW38N65M5, STW38NB20, STW3N170

Keywords - STW32NM50N MOSFET specs

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