STW32NM50N Datasheet and Replacement
Type Designator: STW32NM50N
Marking Code: 32NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 62.5 nC
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 179 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO-247
STW32NM50N substitution
STW32NM50N Datasheet (PDF)
stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf

STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf

STB32N65M5, STF32N65M5, STI32N65M5STP32N65M5, STW32N65M5N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS@ Type RDS(on) max IDTJmax 33123 12STB32N65M5 710 V
stp32n55m5 stw32n55m5.pdf

STP32N55M5, STW32N55M5N-channel 550 V, 0.074 , 29 A, MDmesh V Power MOSFETin TO-220 and TO-247Preliminary dataFeaturesVDSS RDS(on) Order codes ID@TJmax maxSTP32N55M5550 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF624S
Keywords - STW32NM50N MOSFET datasheet
STW32NM50N cross reference
STW32NM50N equivalent finder
STW32NM50N lookup
STW32NM50N substitution
STW32NM50N replacement
History: IRF624S



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