STW33N60M2 MOSFET Datasheet: N-Ch, 600V, 26A. Full specification with pinout and replacement list

STW33N60M2 Specs and Replacement

Type Designator: STW33N60M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-247

STW33N60M2 substitution

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STW33N60M2 datasheet

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STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1 ... See More ⇒

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STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in D PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) D STB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg... See More ⇒

8.1. Size:332K 1
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