STW33N60M2 Datasheet and Replacement
Type Designator: STW33N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-247
STW33N60M2 substitution
STW33N60M2 Datasheet (PDF)
stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221
stb33n60dm2 stp33n60dm2 stw33n60dm2.pdf

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) DSTB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg
Datasheet: STW29NK50ZD , STW30N20 , STW30NM60D , STW30NM60N , STW30NM60ND , STW31N65M5 , STW32NM50N , STW33N20 , IRF840 , STW34N65M5 , STW36N55M5 , STW36NM60ND , STW38N65M5 , STW38NB20 , STW3N170 , STW40N20 , STW40N60M2 .
History: 2SK2573
Keywords - STW33N60M2 MOSFET datasheet
STW33N60M2 cross reference
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History: 2SK2573



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