All MOSFET. STW50NB20 Datasheet

 

STW50NB20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW50NB20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-247

 STW50NB20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW50NB20 Datasheet (PDF)

 ..1. Size:195K  st
 stw50nb20.pdf

STW50NB20 STW50NB20

STW50NB20N - CHANNEL 200V - 0.047 - 50A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW50NB20 200 V

 8.1. Size:712K  st
 stw50n65dm2ag.pdf

STW50NB20 STW50NB20

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance

 8.2. Size:307K  st
 stw50n10.pdf

STW50NB20 STW50NB20

STW50N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW50N10 100 V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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