All MOSFET. STW50NB20 Datasheet

 

STW50NB20 Datasheet and Replacement


   Type Designator: STW50NB20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-247
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STW50NB20 Datasheet (PDF)

 ..1. Size:195K  st
 stw50nb20.pdf pdf_icon

STW50NB20

STW50NB20N - CHANNEL 200V - 0.047 - 50A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW50NB20 200 V

 8.1. Size:712K  st
 stw50n65dm2ag.pdf pdf_icon

STW50NB20

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1capacitance Low on-resistance

 8.2. Size:307K  st
 stw50n10.pdf pdf_icon

STW50NB20

STW50N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW50N10 100 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STW78N65M5 | STW75NF30 | STW65N80K5 | SUD08P06-155L-GE3 | STW69N65M5-4 | SUD50N10-34P | SUB60N06-18

Keywords - STW50NB20 MOSFET datasheet

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