STW50NB20 Specs and Replacement

Type Designator: STW50NB20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO-247

STW50NB20 substitution

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STW50NB20 datasheet

 ..1. Size:195K  st
 stw50nb20.pdf pdf_icon

STW50NB20

STW50NB20 N - CHANNEL 200V - 0.047 - 50A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW50NB20 200 V ... See More ⇒

 8.1. Size:712K  st
 stw50n65dm2ag.pdf pdf_icon

STW50NB20

STW50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance ... See More ⇒

 8.2. Size:307K  st
 stw50n10.pdf pdf_icon

STW50NB20

STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW50N10 100 V ... See More ⇒

Detailed specifications: STW40N60M2, STW40N65M2, STW40N95K5, STW43NM50N, STW45N65M5, STW46NF30, STW48N60M2, STW48N60M2-4, AON6414A, STW54NK30Z, STW55NM50N, STW56N60M2, STW56N60M2-4, STW56N65M2, STW56N65M2-4, STW57N65M5, STW57N65M5-4

Keywords - STW50NB20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.