STW55NM50N Specs and Replacement

Type Designator: STW55NM50N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: TO-247

STW55NM50N substitution

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STW55NM50N datasheet

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 stw55nm50n.pdf pdf_icon

STW55NM50N

STW55NM50N N-channel 500 V, 0.040 , 54 A, MDmesh II Power MOSFET TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max STW55NM50N 550 V ... See More ⇒

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 stw55nm60nd.pdf pdf_icon

STW55NM50N

STW55NM60ND N-channel 600 V - 0.047 - 51 A TO-247 FDmesh II Power MOSFET (with fast diode) Features VDSS RDS(on) Type ID (@TJmax) (max) STW55NM60ND 650 V ... See More ⇒

 7.2. Size:329K  st
 stw55nm60n.pdf pdf_icon

STW55NM50N

STW55NM60N N-channel 600 V, 0.047 , 51 A, MDmesh II Power MOSFET TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max STW55NM60N 650 V ... See More ⇒

 8.1. Size:334K  1
 sth55n10 sth55n10fi stw55n10.pdf pdf_icon

STW55NM50N

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Detailed specifications: STW40N95K5, STW43NM50N, STW45N65M5, STW46NF30, STW48N60M2, STW48N60M2-4, STW50NB20, STW54NK30Z, 2N7000, STW56N60M2, STW56N60M2-4, STW56N65M2, STW56N65M2-4, STW57N65M5, STW57N65M5-4, STW60NE10, STW60NM50N

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