All MOSFET. STW57N65M5-4 Datasheet

 

STW57N65M5-4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW57N65M5-4
   Marking Code: 57N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 98 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: TO-247-4

 STW57N65M5-4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW57N65M5-4 Datasheet (PDF)

 ..1. Size:1194K  st
 stw57n65m5-4.pdf

STW57N65M5-4 STW57N65M5-4

STW57N65M5-4N-channel 650 V, 0.056 typ., 42 A, MDmesh V Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW57N65M5-4 710 V 0.063 42 A Higher VDS rating4 Higher dv/dt capability321 Excellent switching performance thanks to the extra driving source pinTO247-4 Easy to drive 100% aval

 4.1. Size:1044K  st
 stw57n65m5 stwa57n65m5.pdf

STW57N65M5-4 STW57N65M5-4

STW57N65M5, STWA57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTW57N65M5710 V 0.063 42 ASTWA57N65M5 Worldwide best RDS(on)*area amongst the 32silicon based devices1TO-247 Higher VDSS rating, high dv/dt capabilityTO-24

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IPB019N06L3 | PTP16N65 | BSC093N04LSG | IRLI520GPBF | IXTA90N055T2 | IXTT10P50 | 2N6796JANTX

 

 
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