STW57N65M5-4 Specs and Replacement

Type Designator: STW57N65M5-4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: TO-247-4

STW57N65M5-4 substitution

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STW57N65M5-4 datasheet

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 stw57n65m5-4.pdf pdf_icon

STW57N65M5-4

STW57N65M5-4 N-channel 650 V, 0.056 typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features RDS(on) Order code VDS @ TJmax max ID STW57N65M5-4 710 V 0.063 42 A Higher VDS rating 4 Higher dv/dt capability 3 2 1 Excellent switching performance thanks to the extra driving source pin TO247-4 Easy to drive 100% aval... See More ⇒

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STW57N65M5-4

STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STW57N65M5 710 V 0.063 42 A STWA57N65M5 Worldwide best RDS(on)*area amongst the 3 2 silicon based devices 1 TO-247 Higher VDSS rating, high dv/dt capability TO-24... See More ⇒

Detailed specifications: STW50NB20, STW54NK30Z, STW55NM50N, STW56N60M2, STW56N60M2-4, STW56N65M2, STW56N65M2-4, STW57N65M5, IRF9540, STW60NE10, STW60NM50N, STW62N65M5, STW69N65M5, STW69N65M5-4, STW6NA80, STW70N60M2, STW75N20

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