STW60NM50N Specs and Replacement

Type Designator: STW60NM50N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 446 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 365 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TO-247

STW60NM50N substitution

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STW60NM50N datasheet

 ..1. Size:751K  st
 stw60nm50n.pdf pdf_icon

STW60NM50N

STW60NM50N N-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V ... See More ⇒

 ..2. Size:244K  inchange semiconductor
 stw60nm50n.pdf pdf_icon

STW60NM50N

isc N-Channel MOSFET Transistor STW60NM50N FEATURES Static drain-source on-resistance RDS(on) 0.043 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for the most demanding high efficiency converters. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

 8.1. Size:202K  st
 stw60ne10.pdf pdf_icon

STW60NM50N

STW60NE10 N - CHANNEL 100V - 0.016 - 60A TO-247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW60NE10 100 V ... See More ⇒

 8.2. Size:569K  st
 stw60n65m5 stfw60n65m5.pdf pdf_icon

STW60NM50N

STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features VDSS @ RDS(on) Order codes ID TJmax max STFW60N65M5 1 1 1 710 V ... See More ⇒

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Detailed specifications: STW55NM50N, STW56N60M2, STW56N60M2-4, STW56N65M2, STW56N65M2-4, STW57N65M5, STW57N65M5-4, STW60NE10, 2SK3878, STW62N65M5, STW69N65M5, STW69N65M5-4, STW6NA80, STW70N60M2, STW75N20, STW78N65M5, STW7N105K5

Keywords - STW60NM50N MOSFET specs

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