STW60NM50N Datasheet and Replacement
Type Designator: STW60NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 446 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 365 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO-247
STW60NM50N substitution
STW60NM50N Datasheet (PDF)
stw60nm50n.pdf

STW60NM50NN-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDSS (@Tjmax) RDS(on) max IDSTW60NM50N 550 V
stw60nm50n.pdf

isc N-Channel MOSFET Transistor STW60NM50NFEATURESStatic drain-source on-resistance:RDS(on)0.043100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for the most demanding high efficiency converters.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
stw60ne10.pdf

STW60NE10N - CHANNEL 100V - 0.016 - 60A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW60NE10 100 V
stw60n65m5 stfw60n65m5.pdf

STW60N65M5STFW60N65M5N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFETin TO-247, TO-3PFFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTFW60N65M5111710 V
Datasheet: STW55NM50N , STW56N60M2 , STW56N60M2-4 , STW56N65M2 , STW56N65M2-4 , STW57N65M5 , STW57N65M5-4 , STW60NE10 , IRFP260 , STW62N65M5 , STW69N65M5 , STW69N65M5-4 , STW6NA80 , STW70N60M2 , STW75N20 , STW78N65M5 , STW7N105K5 .
History: PK527BA
Keywords - STW60NM50N MOSFET datasheet
STW60NM50N cross reference
STW60NM50N equivalent finder
STW60NM50N lookup
STW60NM50N substitution
STW60NM50N replacement
History: PK527BA



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