All MOSFET. STW69N65M5-4 Datasheet

 

STW69N65M5-4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW69N65M5-4
   Marking Code: 69N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 143 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-247-4

 STW69N65M5-4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW69N65M5-4 Datasheet (PDF)

 ..1. Size:783K  st
 stw69n65m5-4.pdf

STW69N65M5-4 STW69N65M5-4

STW69N65M5-4N-channel 650 V, 0.037 typ., 58 A, MDmesh V Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW69N65M5-4 710 V 0.045 58 A Higher VDS rating43 Higher dv/dt capability21 Excellent switching performance thanks to the extra driving source pinTO247-4 Easy to drive 100% aval

 4.1. Size:666K  st
 stfw69n65m5 stw69n65m5.pdf

STW69N65M5-4 STW69N65M5-4

STFW69N65M5 STW69N65M5N-channel 650 V, 0.037 typ., 58 A MDmesh V Power MOSFETin TO-3PF and TO-247 packagesDatasheet - production dataFeaturesOrder codes VDSS @ TJmax RDS(on) max IDSTFW69N65M5710 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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