STW78N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW78N65M5
Marking Code: 78N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 203 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-247
STW78N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW78N65M5 Datasheet (PDF)
stw78n65m5.pdf
STW78N65M5Automotive-grade N-channel 650 V, 0.024 typ., 69 A, MDmesh V Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDS @Tjmax. RDS(on) max. IDSTW78N65M5 710 V 0.032 69 A Designed for automotive applications and AEC-Q101 qualified32 Higher VDSS rating1 Higher dv/dt capabilityTO-247 Excellent switching performan
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STW70N60DM2
History: STW70N60DM2
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918