STW7N105K5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STW7N105K5
Marking Code: 7N105K5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO-247
STW7N105K5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW7N105K5
Datasheet (PDF)
..1. Size:1031K st
stp7n105k5 stu7n105k5 stw7n105k5.pdf 
STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F
9.1. Size:132K 1
sth7na80fi stw7na80.pdf
STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V
9.2. Size:253K st
stw7nb80.pdf
STW7NB80N-CHANNEL 800V - 1.6 - 6.5A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW7NB80 800 V
9.3. Size:76K st
stw7na100.pdf
STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDSTW7NA100 1000 V
9.4. Size:106K st
sth7na90fi stw7na90.pdf
STW7NA90STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218FAST POWER MOSFETTYPE VDSS RDS(on) IDSTW7NA90 900 V
9.5. Size:122K st
stw7n.pdf
STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V
9.6. Size:939K st
stf7n95k3 stp7n95k3 stw7n95k3.pdf
STF7N95K3STP7N95K3, STW7N95K3N-channel 950 V, 1.1 , 7.2 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax3STF7N95K3 950 V
9.7. Size:264K st
stw7nc80z.pdf
STW7NC80ZN-CHANNEL 800V - 1.5 - 6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW7NC80Z 800 V
9.8. Size:47K st
stw7nb80-.pdf
STW7NB80N - CHANNEL 800V - 1.6 - 6.5A - TO-247PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTW7NB80 800 V
9.9. Size:481K st
stp6nk90z stp6nk90zfp stb6nk90z stw7nk90z.pdf
STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V
9.10. Size:653K st
stb6nk90zt4 stp6nk90z stp6nk90zfp stw7nk90z.pdf
STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90ZDatasheetN-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packagesFeaturesTABTAB3Order codes VDS RDS(on)max. ID123D PAKTO-220 21 STB6NK90ZT4STP6NK90Z900 V 2 5.8 ASTP6NK90ZFP32 STW7NK90Z312TO-220FPTO-2471 Extremely high dv/dt capability
9.11. Size:243K st
stw7nc90z.pdf
STW7NC90ZN-CHANNEL 900V - 1.55 - 6A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW7NC90Z 900 V
9.12. Size:123K st
stw7na80.pdf
STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V
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