STW7N105K5 Specs and Replacement

Type Designator: STW7N105K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-247

STW7N105K5 substitution

- MOSFET ⓘ Cross-Reference Search

 

STW7N105K5 datasheet

 ..1. Size:1031K  st
stp7n105k5 stu7n105k5 stw7n105k5.pdf pdf_icon

STW7N105K5

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max. ID PTOT STP7N105K5 3 2 1 STU7N105K5 1050 V 2 4 A 110 W 3 2 TO-220 1 STW7N105K5 TO-247 TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F... See More ⇒

 9.1. Size:132K  1
sth7na80fi stw7na80.pdf pdf_icon

STW7N105K5

STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V ... See More ⇒

 9.2. Size:253K  st
stw7nb80.pdf pdf_icon

STW7N105K5

STW7NB80 N-CHANNEL 800V - 1.6 - 6.5A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW7NB80 800 V ... See More ⇒

 9.3. Size:76K  st
stw7na100.pdf pdf_icon

STW7N105K5

STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID STW7NA100 1000 V ... See More ⇒

Detailed specifications: STW60NM50N, STW62N65M5, STW69N65M5, STW69N65M5-4, STW6NA80, STW70N60M2, STW75N20, STW78N65M5, IRFP260, STW7NA100, STW7NA80, STW7NA90, STW80NE06-10, STW80NF06, STW80NF55-08, STW88N65M5, STW8NA60

Keywords - STW7N105K5 MOSFET specs

 STW7N105K5 cross reference

 STW7N105K5 equivalent finder

 STW7N105K5 pdf lookup

 STW7N105K5 substitution

 STW7N105K5 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility