All MOSFET. STW7N105K5 Datasheet

 

STW7N105K5 Datasheet and Replacement


   Type Designator: STW7N105K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-247
 

 STW7N105K5 substitution

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STW7N105K5 Datasheet (PDF)

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stp7n105k5 stu7n105k5 stw7n105k5.pdf pdf_icon

STW7N105K5

STP7N105K5, STU7N105K5, STW7N105K5N-channel 1050 V, 1.4 typ., 4 A Zener-protected SuperMESH 5Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - preliminary dataFeatures TABOrder codes VDS RDS(on) max. ID PTOTSTP7N105K5321STU7N105K5 1050 V 2 4 A 110 W 32TO-2201 STW7N105K5TO-247TAB IPAK 1050 V worldwide best RDS(on) Worldwide best F

 9.1. Size:132K  1
sth7na80fi stw7na80.pdf pdf_icon

STW7N105K5

STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V

 9.2. Size:253K  st
stw7nb80.pdf pdf_icon

STW7N105K5

STW7NB80N-CHANNEL 800V - 1.6 - 6.5A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW7NB80 800 V

 9.3. Size:76K  st
stw7na100.pdf pdf_icon

STW7N105K5

STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDSTW7NA100 1000 V

Datasheet: STW60NM50N , STW62N65M5 , STW69N65M5 , STW69N65M5-4 , STW6NA80 , STW70N60M2 , STW75N20 , STW78N65M5 , 8205A , STW7NA100 , STW7NA80 , STW7NA90 , STW80NE06-10 , STW80NF06 , STW80NF55-08 , STW88N65M5 , STW8NA60 .

History: AP4415GJ | BSC010N04LST | OSG60R380DF | AP9997GK | HTJ1K3P03 | KI2341DS | IXTT12N140

Keywords - STW7N105K5 MOSFET datasheet

 STW7N105K5 cross reference
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