STW80NE06-10 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STW80NE06-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-247

STW80NE06-10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STW80NE06-10 Datasheet (PDF)

..1. Size:202K st
stw80ne06-10.pdf

STW80NE06-10N-CHANNEL 60V - 0.0085 - 80A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW80NE06-10 60 V

8.1. Size:328K 1
sth80n05 sth80n05fi stw80n05.pdf

8.2. Size:251K st
stw80nf10.pdf

STW80NF10N-CHANNEL 100V - 0.012 - 80A TO-247LOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW80NF10 100 V

8.3. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

8.4. Size:357K st
stw80nf55-08.pdf

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

8.5. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf