STW80NE06-10 Specs and Replacement

Type Designator: STW80NE06-10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-247

STW80NE06-10 substitution

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STW80NE06-10 datasheet

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 stw80ne06-10.pdf pdf_icon

STW80NE06-10

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 sth80n05 sth80n05fi stw80n05.pdf pdf_icon

STW80NE06-10

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 stw80nf10.pdf pdf_icon

STW80NE06-10

STW80NF10 N-CHANNEL 100V - 0.012 - 80A TO-247 LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW80NF10 100 V ... See More ⇒

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 stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

STW80NE06-10

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V ... See More ⇒

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Detailed specifications: STW6NA80, STW70N60M2, STW75N20, STW78N65M5, STW7N105K5, STW7NA100, STW7NA80, STW7NA90, K4145, STW80NF06, STW80NF55-08, STW88N65M5, STW8NA60, STW8NA80, STW8NB100, STW9NA80, STW9NK95Z

Keywords - STW80NE06-10 MOSFET specs

 STW80NE06-10 cross reference

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