STW80NE06-10 Datasheet and Replacement
Type Designator: STW80NE06-10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 890 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-247
STW80NE06-10 substitution
STW80NE06-10 Datasheet (PDF)
stw80ne06-10.pdf
STW80NE06-10N-CHANNEL 60V - 0.0085 - 80A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW80NE06-10 60 V
stw80nf10.pdf
STW80NF10N-CHANNEL 100V - 0.012 - 80A TO-247LOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW80NF10 100 V
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf
STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V
Datasheet: STW6NA80 , STW70N60M2 , STW75N20 , STW78N65M5 , STW7N105K5 , STW7NA100 , STW7NA80 , STW7NA90 , K4145 , STW80NF06 , STW80NF55-08 , STW88N65M5 , STW8NA60 , STW8NA80 , STW8NB100 , STW9NA80 , STW9NK95Z .
Keywords - STW80NE06-10 MOSFET datasheet
STW80NE06-10 cross reference
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STW80NE06-10 replacement
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