All MOSFET. STW8NB100 Datasheet

 

STW8NB100 Datasheet and Replacement


   Type Designator: STW8NB100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO-247
 

 STW8NB100 substitution

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STW8NB100 Datasheet (PDF)

 ..1. Size:175K  st
 stw8nb100.pdf pdf_icon

STW8NB100

STW8NB100N-CHANNEL 1000V - 1.3 - 7.3ATO-247PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB100 1000V

 8.1. Size:311K  st
 stw8nb90.pdf pdf_icon

STW8NB100

STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB90 900 V

 8.2. Size:323K  st
 stw8nb90 sth8nb90fi.pdf pdf_icon

STW8NB100

STW8NB90STH8NB90FIN-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW8NB90 900 V

 8.3. Size:56K  st
 stw8nb80.pdf pdf_icon

STW8NB100

STW8NB80N - CHANNEL 800V - 1.2 - 7.5A - TO-247PowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTW8NB80 800 V

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Datasheet: STW7NA80 , STW7NA90 , STW80NE06-10 , STW80NF06 , STW80NF55-08 , STW88N65M5 , STW8NA60 , STW8NA80 , AON7506 , STW9NA80 , STW9NK95Z , STWA12N120K5 , STWA20N95K5 , STWA45N65M5 , STWA57N65M5 , STWA88N65M5 , STY100NM60N .

History: RJK5014DPK | SSM3K12T | AP9977GM | AFN3436 | DMT6009LPS | IPA60R250CP | FQPF5P10

Keywords - STW8NB100 MOSFET datasheet

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