All MOSFET. STW8NB100 Datasheet

 

STW8NB100 MOSFET. Datasheet pdf. Equivalent

Type Designator: STW8NB100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 68 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 275 pF

Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm

Package: TO-247

STW8NB100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW8NB100 Datasheet (PDF)

1.1. stw8nb100.pdf Size:175K _update

STW8NB100
STW8NB100

STW8NB100 N-CHANNEL 1000V - 1.3Ω - 7.3ATO-247 PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STW8NB100 1000V < 1.45 Ω 7.3 A TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 ±30V GATE TO SOURCE VOLTAGE RATING TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMi

1.2. stw8nb100.pdf Size:248K _st2

STW8NB100
STW8NB100

STW8NB100 N-CHANNEL 1000V - 1.3? - 7.3ATO-247 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB100 1000V < 1.45 ? 7.3 A TYPICAL RDS(on) = 1.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 30V GATE TO SOURCE VOLTAGE RATING TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics

 4.1. stw8nb90 sth8nb90fi.pdf Size:323K _st2

STW8NB100
STW8NB100

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 ? - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 ? 8 A STH8NB90FI 900 V < 1.45 ? 5 A TYPICAL RDS(on) = 1.1 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 GATE CHARGE MINIMIZED 1 1 TO-247 ISOWATT218 DESCRIPTION Using the latest high voltage MESH OVER

4.2. stw8nb80.pdf Size:56K _st2

STW8NB100
STW8NB100

STW8NB80 N - CHANNEL 800V - 1.2? - 7.5A - TO-247 PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STW8NB80 800 V < 1.6 ? 7.5 A TYPICAL R = 1.2 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an

 4.3. stw8nb90.pdf Size:311K _st2

STW8NB100
STW8NB100

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 ? - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 ? 8 A STH8NB90FI 900 V < 1.45 ? 5 A TYPICAL RDS(on) = 1.1 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 GATE CHARGE MINIMIZED 1 1 TO-247 ISOWATT218 DESCRIPTION Using the latest high voltage MESH OVER

Datasheet: STW7NA80 , STW7NA90 , STW80NE06-10 , STW80NF06 , STW80NF55-08 , STW88N65M5 , STW8NA60 , STW8NA80 , 2N7002 , STW9NA80 , STW9NK95Z , STWA12N120K5 , STWA20N95K5 , STWA45N65M5 , STWA57N65M5 , STWA88N65M5 , STY100NM60N .

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