STW8NB100 Specs and Replacement

Type Designator: STW8NB100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: TO-247

STW8NB100 substitution

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STW8NB100 datasheet

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 stw8nb100.pdf pdf_icon

STW8NB100

STW8NB100 N-CHANNEL 1000V - 1.3 - 7.3ATO-247 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB100 1000V ... See More ⇒

 8.1. Size:311K  st
 stw8nb90.pdf pdf_icon

STW8NB100

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒

 8.2. Size:323K  st
 stw8nb90 sth8nb90fi.pdf pdf_icon

STW8NB100

STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW8NB90 900 V ... See More ⇒

 8.3. Size:56K  st
 stw8nb80.pdf pdf_icon

STW8NB100

STW8NB80 N - CHANNEL 800V - 1.2 - 7.5A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STW8NB80 800 V ... See More ⇒

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Detailed specifications: STW7NA80, STW7NA90, STW80NE06-10, STW80NF06, STW80NF55-08, STW88N65M5, STW8NA60, STW8NA80, IRFB3607, STW9NA80, STW9NK95Z, STWA12N120K5, STWA20N95K5, STWA45N65M5, STWA57N65M5, STWA88N65M5, STY100NM60N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.