STY105NM50N Specs and Replacement

Type Designator: STY105NM50N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: MAX247

STY105NM50N substitution

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STY105NM50N datasheet

 ..1. Size:902K  st
 sty105nm50n.pdf pdf_icon

STY105NM50N

STY105NM50N N-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet - production data Features VDSS Order code @TjMAX RDS(on) max ID STY105NM50N 550 V ... See More ⇒

 9.1. Size:810K  st
 sty100nm60n.pdf pdf_icon

STY105NM50N

STY100NM60N N-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet production data Features VDSS Type RDS(on) max ID @ TJmax STY100NM60N 650 V ... See More ⇒

 9.2. Size:255K  st
 sty100ns20fd.pdf pdf_icon

STY105NM50N

STY100NS20FD N-channel 200V - 0.022 - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STY100NS20FD 200V ... See More ⇒

Detailed specifications: STW9NK95Z, STWA12N120K5, STWA20N95K5, STWA45N65M5, STWA57N65M5, STWA88N65M5, STY100NM60N, STY100NS20FD, BS170, STY139N65M5, STY145N65M5, STY34NB50, MCH3333A, MCH3382, MCH3421, MCH3427, MCH3481

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