STY105NM50N Datasheet and Replacement
Type Designator: STY105NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: MAX247
- MOSFET Cross-Reference Search
STY105NM50N Datasheet (PDF)
sty105nm50n.pdf
STY105NM50NN-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 packageDatasheet - production dataFeaturesVDSS Order code@TjMAX RDS(on) max IDSTY105NM50N 550 V
sty100nm60n.pdf
STY100NM60NN-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 packageDatasheet production dataFeaturesVDSSType RDS(on) max ID@ TJmaxSTY100NM60N 650 V
sty100ns20fd.pdf
STY100NS20FDN-channel 200V - 0.022 - 100A - Max247MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTY100NS20FD 200V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF298L | 2N4118A | SUD80460E
Keywords - STY105NM50N MOSFET datasheet
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History: AOTF298L | 2N4118A | SUD80460E
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