All MOSFET. STY105NM50N Datasheet

 

STY105NM50N MOSFET. Datasheet pdf. Equivalent

Type Designator: STY105NM50N

SMD Transistor Code: 105NM50N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 625 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 326 nC

Rise Time (tr): 88 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: MAX247

STY105NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STY105NM50N Datasheet (PDF)

1.1. sty105nm50n.pdf Size:902K _update

STY105NM50N
STY105NM50N

STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh™ II Power MOSFET in a Max247 package Datasheet - production data Features VDSS Order code @TjMAX RDS(on) max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) • 100% avalanche tested 3 2 • Low input capacitance and gate charge 1 • Low gate input resistance Max247 Applications • Switching

5.1. sty100ns20fd.pdf Size:255K _update

STY105NM50N
STY105NM50N

STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY™ Power MOSFET General features Type VDSS RDS(on) ID STY100NS20FD 200V <0.024Ω 100A ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 2 1 ■ Gate charge minimized ■ ± 20V gate to source voltage rating Max247 ■ Low intrinsic capacitance ■ Fast body-drain diode:low trr, Qrr Description In

5.2. sty100nm60n.pdf Size:810K _update

STY105NM50N
STY105NM50N

STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet — production data Features VDSS Type RDS(on) max ID @ TJmax STY100NM60N 650 V < 0.029 Ω 98 A ■ 100% avalanche tested 3 ■ Low input capacitance and gate charge 2 1 ■ Low gate input resistance Max247 Applications ■ Switching applications Figure 1. Internal schemat

 5.3. sty100ns20fd.pdf Size:260K _st2

STY105NM50N
STY105NM50N

STY100NS20FD N-channel 200V - 0.022? - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS(on) ID STY100NS20FD 200V <0.024? 100A Extremely high dv/dt capability 100% avalanche tested 3 2 1 Gate charge minimized 20V gate to source voltage rating Max247 Low intrinsic capacitance Fast body-drain diode:low trr, Qrr Description Internal schematic diagr

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
Back to Top

 


STY105NM50N
  STY105NM50N
  STY105NM50N
  STY105NM50N
 

social 

LIST

Last Update

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
Back to Top