STY105NM50N MOSFET. Datasheet pdf. Equivalent
Type Designator: STY105NM50N
Marking Code: 105NM50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 326 nC
trⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: MAX247
STY105NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STY105NM50N Datasheet (PDF)
sty105nm50n.pdf
STY105NM50NN-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 packageDatasheet - production dataFeaturesVDSS Order code@TjMAX RDS(on) max IDSTY105NM50N 550 V
sty100nm60n.pdf
STY100NM60NN-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a Max247 packageDatasheet production dataFeaturesVDSSType RDS(on) max ID@ TJmaxSTY100NM60N 650 V
sty100ns20fd.pdf
STY100NS20FDN-channel 200V - 0.022 - 100A - Max247MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTY100NS20FD 200V
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918