STY139N65M5 Datasheet and Replacement
Type Designator: STY139N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 365 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: MAX247
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STY139N65M5 Datasheet (PDF)
sty139n65m5.pdf
STY139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in Max247 packageDatasheet production dataFeaturesVDS Order code@TjMAX RDS(on) max IDSTY139N65M5 710 V 0.017 130 A Max247 worldwide best RDS(on) Higher VDSS rating32 Higher dv/dt capability1 Excellent switching performanceMax247 Easy to drive 100% avalanche tes
sty130nf20d.pdf
STY130NF20DN-channel 200 V, 0.01 , 130 A, Max247low gate charge STripFET II Power MOSFETFeatures RDS(on) Type VDSS ID PWmaxSTY130NF20D 200 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF298L | SUD80460E | 2N4118A
Keywords - STY139N65M5 MOSFET datasheet
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History: AOTF298L | SUD80460E | 2N4118A
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