STY139N65M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STY139N65M5
Marking Code: 139N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 363 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 365 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: MAX247
STY139N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STY139N65M5 Datasheet (PDF)
sty139n65m5.pdf
STY139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in Max247 packageDatasheet production dataFeaturesVDS Order code@TjMAX RDS(on) max IDSTY139N65M5 710 V 0.017 130 A Max247 worldwide best RDS(on) Higher VDSS rating32 Higher dv/dt capability1 Excellent switching performanceMax247 Easy to drive 100% avalanche tes
sty130nf20d.pdf
STY130NF20DN-channel 200 V, 0.01 , 130 A, Max247low gate charge STripFET II Power MOSFETFeatures RDS(on) Type VDSS ID PWmaxSTY130NF20D 200 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AO4612
History: AO4612
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918