MCPF04N60 Specs and Replacement
Type Designator: MCPF04N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-220F
MCPF04N60 substitution
- MOSFET ⓘ Cross-Reference Search
MCPF04N60 datasheet
mcpf04n60.pdf
MCC TM MCDF04N60 Micro Commercial Components Output Characteristics Transfer Characteristics 8 1.0 Ta=25 Ta=25 Pulsed Pulsed 6V 0.8 6 5.5V 0.6 5V 4 0.4 VGS=4.5V 2 0.2 0 0.0 0 10 20 30 40 50 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) RDS(ON) VGS RDS(ON) ID 5 15 Ta=25 Ta=25 Pulsed Pulsed 4 12 3 9 VGS= 10V ... See More ⇒
Detailed specifications: MCP04N65, MCP87018, MCP87022, MCP87030, MCP87050, MCP87055, MCP87090, MCP87130, IRFB7545, MCPF04N65, MCPF05N60B, MCPF08N60, MCQ4822, MCU01N80, MCU02N80, MCU04N60, MCU04N65
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
