MCPF04N60 Datasheet and Replacement
Type Designator: MCPF04N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-220F
MCPF04N60 substitution
MCPF04N60 Datasheet (PDF)
mcpf04n60.pdf
MCCTMMCDF04N60Micro Commercial ComponentsOutput CharacteristicsTransfer Characteristics8 1.0Ta=25Ta=25PulsedPulsed6V0.865.5V0.65V40.4VGS=4.5V20.20 0.00 10 20 30 40 50 0 2 4 6 8DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)RDS(ON) VGSRDS(ON) ID5 15Ta=25 Ta=25Pulsed Pulsed4 123 9VGS= 10V
Datasheet: MCP04N65 , MCP87018 , MCP87022 , MCP87030 , MCP87050 , MCP87055 , MCP87090 , MCP87130 , 8N60 , MCPF04N65 , MCPF05N60B , MCPF08N60 , MCQ4822 , MCU01N80 , MCU02N80 , MCU04N60 , MCU04N65 .
History: SPP02N80C3 | AP6N8R2LMT | FMP08N50E | SSM3J46CTB | AP20T15GI-HF | AM3015 | FQPF9N30
Keywords - MCPF04N60 MOSFET datasheet
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History: SPP02N80C3 | AP6N8R2LMT | FMP08N50E | SSM3J46CTB | AP20T15GI-HF | AM3015 | FQPF9N30
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