All MOSFET. MCPF05N60B Datasheet

 

MCPF05N60B MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCPF05N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F

 MCPF05N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCPF05N60B Datasheet (PDF)

 ..1. Size:600K  mcc
 mcpf05n60b.pdf

MCPF05N60B MCPF05N60B

 9.1. Size:595K  mcc
 mcpf08n60.pdf

MCPF05N60B MCPF05N60B

 9.2. Size:945K  mcc
 mcpf07n65.pdf

MCPF05N60B MCPF05N60B

MCPF07N65Features High Current Rating Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C S

 9.3. Size:593K  mcc
 mcpf04n65.pdf

MCPF05N60B MCPF05N60B

 9.4. Size:714K  mcc
 mcpf04n60.pdf

MCPF05N60B MCPF05N60B

MCCTMMCDF04N60Micro Commercial ComponentsOutput CharacteristicsTransfer Characteristics8 1.0Ta=25Ta=25PulsedPulsed6V0.865.5V0.65V40.4VGS=4.5V20.20 0.00 10 20 30 40 50 0 2 4 6 8DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)RDS(ON) VGSRDS(ON) ID5 15Ta=25 Ta=25Pulsed Pulsed4 123 9VGS= 10V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM4925 | SDF85NA50JD

 

 
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