All MOSFET. MCPF08N60 Datasheet

 

MCPF08N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCPF08N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220F

 MCPF08N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCPF08N60 Datasheet (PDF)

 ..1. Size:595K  mcc
 mcpf08n60.pdf

MCPF08N60 MCPF08N60

 9.1. Size:600K  mcc
 mcpf05n60b.pdf

MCPF08N60 MCPF08N60

 9.2. Size:945K  mcc
 mcpf07n65.pdf

MCPF08N60 MCPF08N60

MCPF07N65Features High Current Rating Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C S

 9.3. Size:593K  mcc
 mcpf04n65.pdf

MCPF08N60 MCPF08N60

 9.4. Size:714K  mcc
 mcpf04n60.pdf

MCPF08N60 MCPF08N60

MCCTMMCDF04N60Micro Commercial ComponentsOutput CharacteristicsTransfer Characteristics8 1.0Ta=25Ta=25PulsedPulsed6V0.865.5V0.65V40.4VGS=4.5V20.20 0.00 10 20 30 40 50 0 2 4 6 8DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)RDS(ON) VGSRDS(ON) ID5 15Ta=25 Ta=25Pulsed Pulsed4 123 9VGS= 10V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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