All MOSFET. ME3587-G Datasheet

 

ME3587-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME3587-G
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-23-6

 ME3587-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME3587-G Datasheet (PDF)

 ..1. Size:159K  tysemi
 ke3587-g me3587-g.pdf

ME3587-G ME3587-G

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification(ME3587-G)KE3587-G ( )SOT-23-6Unit: mm FeaturesN-channel:VDS=20V ID=4A RDS(ON)0.045 @VGS=4.5V S1 D2 D1 RDS(ON)0.068 @VGS=2.5V RDS(ON)0.12 @VGS=1.8VP-channel:VDS=-20V ID=-2A0to0.1 RDS(ON)0.11 @VGS=-4.5V

 ..2. Size:1233K  matsuki electric
 me3587 me3587-g.pdf

ME3587-G ME3587-G

ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 45m@VGS=4.5V (N-Ch) The ME3587 is the N- and P-Channel logic enhancement mode RDS(ON) 68m@VGS=2.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 120m@VGS=1.8V (N-Ch) DMOS trench technology. This high density process is especia

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