ME3587-G Specs and Replacement

Type Designator: ME3587-G

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-23-6

ME3587-G substitution

- MOSFET ⓘ Cross-Reference Search

 

ME3587-G datasheet

 ..1. Size:159K  tysemi
 ke3587-g me3587-g.pdf pdf_icon

ME3587-G

... See More ⇒

 ..2. Size:1233K  matsuki electric
 me3587 me3587-g.pdf pdf_icon

ME3587-G

ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=4.5V (N-Ch) The ME3587 is the N- and P-Channel logic enhancement mode RDS(ON) 68m @VGS=2.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 120m @VGS=1.8V (N-Ch) DMOS trench technology. This high density process is especia... See More ⇒

Detailed specifications: MCPF05N60B, MCPF08N60, MCQ4822, MCU01N80, MCU02N80, MCU04N60, MCU04N65, MCU05N60, AO4468, MFE930, MFE960, MFE990, MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, SP8K80

Keywords - ME3587-G MOSFET specs

 ME3587-G cross reference

 ME3587-G equivalent finder

 ME3587-G pdf lookup

 ME3587-G substitution

 ME3587-G replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility