SP8K80 Specs and Replacement

Type Designator: SP8K80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 36.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.7 Ohm

Package: SOP-8

SP8K80 substitution

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SP8K80 datasheet

 ..1. Size:518K  rohm
sp8k80.pdf pdf_icon

SP8K80

Data Sheet 10V Drive Nch MOSFET SP8K80 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET (8) (7) (6) (5) Features (1) Tr1 Source 1) Built-in G-S protection diode. (2) Tr1 Gate (3) Tr2 Source 2) Small surface mount package(SOP8). (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Application Switching Packagi... See More ⇒

Detailed specifications: ME3587-G, MFE930, MFE960, MFE990, MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, IRF540, SP8M10FRA, SP8M21FRA, SP8M51, SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2

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