SP8K80 Specs and Replacement
Type Designator: SP8K80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 36.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.7 Ohm
Package: SOP-8
SP8K80 substitution
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SP8K80 datasheet
sp8k80.pdf
Data Sheet 10V Drive Nch MOSFET SP8K80 Structure Dimensions (Unit mm) SOP8 Silicon N-channel MOSFET (8) (7) (6) (5) Features (1) Tr1 Source 1) Built-in G-S protection diode. (2) Tr1 Gate (3) Tr2 Source 2) Small surface mount package(SOP8). (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Application Switching Packagi... See More ⇒
Detailed specifications: ME3587-G, MFE930, MFE960, MFE990, MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, IRF540, SP8M10FRA, SP8M21FRA, SP8M51, SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2
Keywords - SP8K80 MOSFET specs
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