All MOSFET. SP8M10FRA Datasheet

 

SP8M10FRA Datasheet and Replacement


   Type Designator: SP8M10FRA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.4 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
 

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SP8M10FRA Datasheet (PDF)

 ..1. Size:952K  rohm
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SP8M10FRA

SP8M10FRASP8M10Transistors AEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M10FRASP8M10 Structure Dimensions (Unit : mm)Silicon N-channel / P-channel MOSFET SOP85.01.750.4(8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Application Power switching, DC / DC converter.

Datasheet: MFE930 , MFE960 , MFE990 , MGSF1N02ELT1 , SP8K24FRA , SP8K31FRA , SP8K33FRA , SP8K80 , 50N06 , SP8M21FRA , SP8M51 , SP8M70 , SP8M8FRA , SPB100N03S2 , SPB42N03S2L-13 , SPB80N03S2 , SPC1016 .

History: IPB180N04S4-01

Keywords - SP8M10FRA MOSFET datasheet

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