SP8M21FRA Datasheet and Replacement
Type Designator: SP8M21FRA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP-8
SP8M21FRA substitution
SP8M21FRA Datasheet (PDF)
sp8m21fra.pdf

SP8M21SP8M21FRATransistorsAEC-Q101 Qualified4V Drive Nch+Pch MOSFETSP8M21SP8M21FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET / SOP8Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). Each lead has same dimensions ApplicationsSwitching Package specifications Inn
sp8m24fra.pdf

SP8M24FRADatasheet45V Nch+Pch Power MOSFETlOutlinelTr1:Nch Tr2:PchSymbolVDSS 45V -45V SOP8RDS(on)(Max.) 46m 63mID 4.5A 3.5APD 2.0W lFeaturesllInner circuitl1) Low on - resistance2) Small Surface Mount Package (SOP8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) AEC-Q101 QualifiedlPa
Datasheet: MFE960 , MFE990 , MGSF1N02ELT1 , SP8K24FRA , SP8K31FRA , SP8K33FRA , SP8K80 , SP8M10FRA , IRF640 , SP8M51 , SP8M70 , SP8M8FRA , SPB100N03S2 , SPB42N03S2L-13 , SPB80N03S2 , SPC1016 , SPC1018 .
History: HGK012NE6A | FDD6N50TM
Keywords - SP8M21FRA MOSFET datasheet
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SP8M21FRA lookup
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SP8M21FRA replacement
History: HGK012NE6A | FDD6N50TM



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