SP8M51 Specs and Replacement

Type Designator: SP8M51

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: SOP-8

SP8M51 substitution

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SP8M51 datasheet

 ..1. Size:555K  rohm
 sp8m51.pdf pdf_icon

SP8M51

Data Sheet 4V Drive Nch + Pch MOSFET SP8M51 Structure Dimensions (Unit mm) Silicon N-channel MOSFET/ SOP8 Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (1) (4) Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping Type Code ... See More ⇒

Detailed specifications: MFE990, MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, SP8K80, SP8M10FRA, SP8M21FRA, IRFZ44, SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, SPC4516

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