SP8M70 Specs and Replacement

Type Designator: SP8M70

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.63 Ohm

Package: SOP-8

SP8M70 substitution

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SP8M70 datasheet

 ..1. Size:507K  rohm
 sp8m70.pdf pdf_icon

SP8M70

SP8M70 Dual N & Pch Power MOSFET Datasheet lOutline Symbol Tr1 Nch Tr2 Pch (8) SOP8 (7) (6) VDSS 250V -250V (5) RDS(on) (Max.) 1.63W 2.8W (1) (2) ID (3) 3.0A -2.5A (4) PD 2.0W lFeatures lInner circuit 1) Low on-resistance. (1) Tr1 Source (5) Tr2 Drain 2) Fast switching speed. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain 3) Drive circuits can b... See More ⇒

Detailed specifications: MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, SP8K80, SP8M10FRA, SP8M21FRA, SP8M51, IRF640, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, SPC4516, SPC4516B

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