SPN05T10 Specs and Replacement
Type Designator: SPN05T10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO-252
SPN05T10 substitution
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SPN05T10 datasheet
spn05t10.pdf
SPN05T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching for The SPN05T10 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN05T10 Load Switch has been designed specifically to improve the ove... See More ⇒
Detailed specifications: SPD50N03S2-07, SPD50N03S2L-06, SPD50N03S2L-06T, SPI80N06S-80, SPM1007, SPM1008, SPMT16040F, SPMT9200F, SKD502T, SPN09T10, SPN1012, SPN10T10, SPN11T10, SPN12T20, SPN30T10, SPN50T10, SPN65T10
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