SPN05T10 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPN05T10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO-252
SPN05T10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPN05T10 Datasheet (PDF)
..1. Size:134K syncpower
spn05t10.pdf
spn05t10.pdf
SPN05T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching forThe SPN05T10 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN05T10 Load Switch has been designed specifically to improve the ove
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
