All MOSFET. SPN05T10 Datasheet

 

SPN05T10 Datasheet and Replacement


   Type Designator: SPN05T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.5 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-252
 

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SPN05T10 Datasheet (PDF)

 ..1. Size:134K  syncpower
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SPN05T10

SPN05T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching forThe SPN05T10 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN05T10 Load Switch has been designed specifically to improve the ove

Datasheet: SPD50N03S2-07 , SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPP20N60C3 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 .

History: CS6N70K | HFS2N60S | HGA040N06SL | IPSA70R900P7S | BRCS080N04ZC | SPMT9200F | IPT012N06N

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