SPN09T10 Specs and Replacement
Type Designator: SPN09T10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
SPN09T10 substitution
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SPN09T10 datasheet
spn09t10.pdf
SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN09T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith... See More ⇒
Detailed specifications: SPD50N03S2L-06, SPD50N03S2L-06T, SPI80N06S-80, SPM1007, SPM1008, SPMT16040F, SPMT9200F, SPN05T10, K4145, SPN1012, SPN10T10, SPN11T10, SPN12T20, SPN30T10, SPN50T10, SPN65T10, SPN80T10
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