All MOSFET. SPN09T10 Datasheet

 

SPN09T10 Datasheet and Replacement


   Type Designator: SPN09T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-252 TO-263 TO-251
 

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SPN09T10 Datasheet (PDF)

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SPN09T10

SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN09T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith

Datasheet: SPD50N03S2L-06 , SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , IRFB3607 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 .

History: SPN05T10 | IPT012N06N | SPMT9200F | IPSA70R900P7S | BRCS080N04ZC | HGA040N06SL | CS6N70K

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