All MOSFET. SPN11T10 Datasheet

 

SPN11T10 Datasheet and Replacement


   Type Designator: SPN11T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-252 TO-251
 

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SPN11T10 Datasheet (PDF)

 ..1. Size:220K  syncpower
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SPN11T10

SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN11T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN11T10has been designed specifically to improve the overall efficiency of DC/DC converters using eith

Datasheet: SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , 4N60 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P .

History: BUZ73AL | MP4N150 | SSM3K329R

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