SPN11T10 Datasheet and Replacement
Type Designator: SPN11T10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-252 TO-251
SPN11T10 substitution
SPN11T10 Datasheet (PDF)
spn11t10.pdf
SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN11T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN11T10has been designed specifically to improve the overall efficiency of DC/DC converters using eith
Datasheet: SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , 12N60 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P .
History: AM30N10-70DE | SPN10T10 | OSG65R900DF | FDPF14N30T
Keywords - SPN11T10 MOSFET datasheet
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SPN11T10 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: AM30N10-70DE | SPN10T10 | OSG65R900DF | FDPF14N30T
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