SPN11T10 Specs and Replacement

Type Designator: SPN11T10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-252 TO-251

SPN11T10 substitution

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SPN11T10 datasheet

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SPN11T10

SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN11T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith... See More ⇒

Detailed specifications: SPM1007, SPM1008, SPMT16040F, SPMT9200F, SPN05T10, SPN09T10, SPN1012, SPN10T10, 12N60, SPN12T20, SPN30T10, SPN50T10, SPN65T10, SPN80T10, SPP08P06P, SPP14N05, SPP15P10P

Keywords - SPN11T10 MOSFET specs

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