All MOSFET. SPN12T20 Datasheet

 

SPN12T20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPN12T20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-252

 SPN12T20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPN12T20 Datasheet (PDF)

 ..1. Size:152K  syncpower
 spn12t20.pdf

SPN12T20 SPN12T20

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching forThe SPN12T20 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN12T20 Load Switch has been designed specifically to improve t

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SPB80N06S2L-H5 | CI47N65

 

 
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