SPN12T20 Datasheet and Replacement
Type Designator: SPN12T20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO-252
SPN12T20 substitution
SPN12T20 Datasheet (PDF)
spn12t20.pdf

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching forThe SPN12T20 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN12T20 Load Switch has been designed specifically to improve t
Datasheet: SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , IRF4905 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH .
History: WFP740 | SVG105R5NT | RRQ020P03 | IXTJ4N150 | HY3312PM | SVG108R5NAMQ | CEP95P04
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History: WFP740 | SVG105R5NT | RRQ020P03 | IXTJ4N150 | HY3312PM | SVG108R5NAMQ | CEP95P04



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