All MOSFET. SPN12T20 Datasheet

 

SPN12T20 Datasheet and Replacement


   Type Designator: SPN12T20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-252
 

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SPN12T20 Datasheet (PDF)

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SPN12T20

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching forThe SPN12T20 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN12T20 Load Switch has been designed specifically to improve t

Datasheet: SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , 5N65 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH .

History: OSG60R055TT3F | AM30N20-78D | OSG60R099KEZF | OSG60R099KSZF | OSG60R099HF | OSG60R099JF

Keywords - SPN12T20 MOSFET datasheet

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