SPN12T20 Specs and Replacement

Type Designator: SPN12T20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO-252

SPN12T20 substitution

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SPN12T20 datasheet

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 spn12t20.pdf pdf_icon

SPN12T20

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power Switching for The SPN12T20 is the N-Channel logic enhancement mode MB/NB/VGA power field effect transistor which is produced using super Network DC/DC Power System high cell density DMOS trench technology. The SPN12T20 Load Switch has been designed specifically to improve t... See More ⇒

Detailed specifications: SPM1008, SPMT16040F, SPMT9200F, SPN05T10, SPN09T10, SPN1012, SPN10T10, SPN11T10, 5N65, SPN30T10, SPN50T10, SPN65T10, SPN80T10, SPP08P06P, SPP14N05, SPP15P10P, SPP15P10PH

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