SPU07N20G MOSFET Datasheet: N-Ch, 200V, 7A. Full specification with pinout and replacement list

SPU07N20G Specs and Replacement

Type Designator: SPU07N20G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: PG-TO251

SPU07N20G substitution

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SPU07N20G datasheet

..1. Size:610K infineon
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SPD 07N20 G SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V VDS N channel Drain-Source on-state resistance 0.4 RDS(on) Enhancement mode Continuous drain current 7 A ID Avalanche rated dv/dt rated 2 1 1 3 2 3 Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-... See More ⇒

..2. Size:260K inchange semiconductor
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isc N-Channel MOSFET Transistor SPU07N20G FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

8.1. Size:975K infineon
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VDS Tjmax G G ... See More ⇒

8.2. Size:888K infineon
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SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated 2 3 Extreme dv/dt rated 3 1 2 1 Ultra low effective capacitances Improved transconductance Type Packag... See More ⇒