SQ2301ES Specs and Replacement

Type Designator: SQ2301ES

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-236

SQ2301ES substitution

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SQ2301ES datasheet

 ..1. Size:216K  vishay
 sq2301es.pdf pdf_icon

SQ2301ES

SQ2301ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 20 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.120 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 2.5 V 0.180 100 % Rg and UIS Tested ID (A) - 3.9 Compliant to RoHS Directive ... See More ⇒

 9.1. Size:224K  vishay
 sq2308bes.pdf pdf_icon

SQ2301ES

SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.170 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 4.5 V 0.220 100 % Rg and UIS Tested ID (A) 2.3 Compliant to RoHS Directive 2002/95/... See More ⇒

 9.2. Size:108K  vishay
 sq2308es.pdf pdf_icon

SQ2301ES

SQ2308ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.155 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.205 Compliant to RoHS Directive 2002/95/EC ID (A) 2.3 AEC-Q101 Qualifiedc Configuration Single Find out more a... See More ⇒

 9.3. Size:217K  vishay
 sq2303es.pdf pdf_icon

SQ2301ES

SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 30 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.170 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.370 100 % Rg and UIS Tested ID (A) - 2.5 Compliant to RoHS Directive 2... See More ⇒

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Detailed specifications: SQ1431EH, SQ1470AEH, SQ1470EH, SQ1539EH, SQ1563AEH, SQ1902AEL, SQ1912AEEH, SQ1912EEH, AO3400A, SQ2303ES, SQ2308BES, SQ2308CES, SQ2308ES, SQ2309ES, SQ2310ES, SQ2315ES, SQ2318AES

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