SQ2325ES Specs and Replacement

Type Designator: SQ2325ES

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.77 Ohm

Package: TO-236

SQ2325ES substitution

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SQ2325ES datasheet

 ..1. Size:227K  vishay
 sq2325es.pdf pdf_icon

SQ2325ES

SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -150 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 1.77 100 % Rg and UIS tested ID (A) -0.84 Material categorization Configuration Single for definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (... See More ⇒

 9.1. Size:219K  vishay
 sq2328es.pdf pdf_icon

SQ2325ES

SQ2328ES www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.300 AEC-Q101 Qualifiedc ID (A) 2 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-236 ... See More ⇒

Detailed specifications: SQ2308CES, SQ2308ES, SQ2309ES, SQ2310ES, SQ2315ES, SQ2318AES, SQ2318ES, SQ2319ES, AON7403, SQ2328ES, SQ2337ES, SQ2348ES, SQ2351ES, SQ2360EES, SQ2361EES, SQ2361ES, SQ2362ES

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