All MOSFET. SQ2325ES Datasheet

 

SQ2325ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2325ES
   Marking Code: 8R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 0.84 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 7.4 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.77 Ohm
   Package: TO-236

 SQ2325ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2325ES Datasheet (PDF)

 ..1. Size:227K  vishay
 sq2325es.pdf

SQ2325ES SQ2325ES

SQ2325ESwww.vishay.comVishay SiliconixAutomotive P-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -150 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 1.77 100 % Rg and UIS testedID (A) -0.84 Material categorization:Configuration Singlefor definitions of compliance please seewww.vishay.com/doc?99912SOT-23 (

 9.1. Size:219K  vishay
 sq2328es.pdf

SQ2325ES SQ2325ES

SQ2328ESwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.300 AEC-Q101 QualifiedcID (A) 2 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO-236

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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