All MOSFET. SQ2325ES Datasheet

 

SQ2325ES Datasheet and Replacement


   Type Designator: SQ2325ES
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.77 Ohm
   Package: TO-236
 

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SQ2325ES Datasheet (PDF)

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SQ2325ES

SQ2325ESwww.vishay.comVishay SiliconixAutomotive P-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -150 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 1.77 100 % Rg and UIS testedID (A) -0.84 Material categorization:Configuration Singlefor definitions of compliance please seewww.vishay.com/doc?99912SOT-23 (

 9.1. Size:219K  vishay
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SQ2325ES

SQ2328ESwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.300 AEC-Q101 QualifiedcID (A) 2 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO-236

Datasheet: SQ2308CES , SQ2308ES , SQ2309ES , SQ2310ES , SQ2315ES , SQ2318AES , SQ2318ES , SQ2319ES , EMB04N03H , SQ2328ES , SQ2337ES , SQ2348ES , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES .

History: SUD50N03-11 | AUIRFB8405 | SM6A23NSFP | AP80N03GP | BRCS30P10IP | RSS130N03FU6TB | 2SJ349

Keywords - SQ2325ES MOSFET datasheet

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