IXFX44N60 Datasheet. Specs and Replacement

Type Designator: IXFX44N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO247

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IXFX44N60 substitution

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IXFX44N60 datasheet

 ..1. Size:104K  ixys
 ixfx44n60 ixfk44n60.pdf pdf_icon

IXFX44N60

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C44 A TO-264 AA (IXFK) IDM TC = 25 C, pulse width limite... See More ⇒

 7.1. Size:233K  ixys
 ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFX44N60

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30... See More ⇒

 7.2. Size:100K  ixys
 ixfx44n55q.pdf pdf_icon

IXFX44N60

Advance Technical Information IXFK 44N55Q VDSS = 550 V HiPerFETTM IXFX 44N55Q ID25 = 44 A Power MOSFETs RDS(on) = 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 550 ... See More ⇒

 7.3. Size:126K  ixys
 ixfx44n50f ixfk44n50f.pdf pdf_icon

IXFX44N60

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C ... See More ⇒

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Detailed specifications: IXFX180N07, IXFX180N085, IXFX180N10, IXFX24N100, IXFX26N90, IXFX28N60, IXFX32N50Q, IXFX34N80, IRF1405, IXFX48N50Q, IXFX50N50, IXFX55N50, IXFX90N20Q, IXFX90N30, IXTA1N100, IXTA2N80, IXTH10N100

Keywords - IXFX44N60 MOSFET specs

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