SQ2351ES Specs and Replacement
Type Designator: SQ2351ES
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TO-236
SQ2351ES substitution
- MOSFET ⓘ Cross-Reference Search
SQ2351ES datasheet
sq2351es.pdf
SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 20 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.115 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 2.5 V 0.205 Material categorization ID (A) - 3.2 For definitions of compliance please see Configuration ... See More ⇒
Detailed specifications: SQ2315ES, SQ2318AES, SQ2318ES, SQ2319ES, SQ2325ES, SQ2328ES, SQ2337ES, SQ2348ES, MMIS60R580P, SQ2360EES, SQ2361EES, SQ2361ES, SQ2362ES, SQ2389ES, SQ2398ES, SQ3410EV, SQ3418EEV
Keywords - SQ2351ES MOSFET specs
SQ2351ES cross reference
SQ2351ES equivalent finder
SQ2351ES pdf lookup
SQ2351ES substitution
SQ2351ES replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
