All MOSFET. SQ2351ES Datasheet

 

SQ2351ES Datasheet and Replacement


   Type Designator: SQ2351ES
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO-236
 

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SQ2351ES Datasheet (PDF)

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SQ2351ES

SQ2351ESwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 20 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.115 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.205 Material categorization:ID (A) - 3.2For definitions of compliance please see Configuration

Datasheet: SQ2315ES , SQ2318AES , SQ2318ES , SQ2319ES , SQ2325ES , SQ2328ES , SQ2337ES , SQ2348ES , 2N7002 , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , SQ2389ES , SQ2398ES , SQ3410EV , SQ3418EEV .

History: IXFK170N20P | IRFU2905ZPBF | MS65R170S | IPA50R199CP | AOI600A70 | UTT10N10 | 2SK2020-01

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