IXFX55N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFX55N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 55
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 330
nC
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 1280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
TO247
IXFX55N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX55N50
Datasheet (PDF)
..1. Size:94K ixys
ixfx50n50 ixfx55n50.pdf 
VDSS ID25 RDS(on)HiPerFETTMIXFX 50N50 500 V 50 A 100 mPower MOSFETsIXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFETPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM
..2. Size:577K ixys
ixfk55n50 ixfx55n50 ixfn55n50.pdf
VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2
9.1. Size:178K ixys
ixfk520n075t2 ixfx520n075t2.pdf
Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 75VIXFK520N075T2HiperFETTMID25 = 520AIXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C75 V TabDSVDGR TJ = 25C to 175C, RGS = 1M 75 VV
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